Semiconducting Nanowires
Cytodiagnostics is the premier company to offer state of the art, high-purity semiconducting nanowires. These materials exhibit outstanding potential as nano-building blocks for future device applications and are used in rapidly growing research areas including:
- Nanoelectronics (Spintronics, single electronics, ballistics, transistors etc)
- Nanophotonics (Nonlinear optics, lasers, LEDs, detectors)
- Sensors (Gas, biological, environmental, chemical, optical) - down to single biomolecule sensitivity.
- Alternative energy (Photovoltaics, dye cells, vibration harvesting, batteries)
GaAs Nanowires
Ultra-high-purity nanowires are extensively used for nanoelectronics and photovoltaics research.
Features
- Precise diameter distributions
- Tailorable compositions to match research needs
InAs Nanowires
Used as channel materials for nanowire based MOSFETs and for higher-
power infrared detection at room temperature.
Features
- High electron mobility material and narrow energy bandgap
- Strong Photo-Dember emitter
GaAs/AlGaAs Nanowires
Core-shell nanowires that are used for applications that require advanced electron transport properties.
Features
- Consistent compositions for repeatable results
- Ideal for high electron mobility device applications
InGaAs Nanowires
Unique nanowires that show great potential for applications that require advanced electron transport properties.
Features
- Tunable optical properties based on In and Ga ratios
- Ideal for high power and high-frequency electronics applications
ZnS Nanowires
Standard ZnS nanowires that are commonplace in optics and photonics research.
Features
- High Purity ZnS composition leads to improved performance
- Tight physical specifications ensure consistency
ZnSe Nanowires
Standard ZnSe nanowires that are being rapidly adopted in optics and photonics research which require smaller bandgaps.
Features
- High Purity ZnSe composition leads to improved performance
- Tight physical specifications ensure consistency
ZnTe Nanowires
Novel ZnTe nanowires. Considered next generation materials for optics and electronics research which require smaller bandgaps.
Features
- High Purity ZnTe composition is more sensitive to Green/UV light.
- Tight specifications ensure consistency.
ZnO Nanowires
Traditional ZnO nanowires exhibit enhanced electrical conductivity and well-defined surface morphologies.
Features
- Ideal for use as a thermoelectric material.
- Unique surface characteristics are very promising for increased device performance.
Semiconducting nanowires have rapidly emerged as a new class of materials with significant potential to uncover new fundamental physics and to drive new applications in quantum electronic and optoelectronic devices.
Semiconductor nanowires show great promise as nanostructured materials for exploring physics in reduced dimensions and in highly-complex geometries, as well as in one-dimensional nanowire devices. Their compatibility with existing semiconductor technologies is crucial as is their ability to be tailored into unique axial and radial heterostructures. Coaxial nanowire structures acting as solar cells are an area of research that shows particular promise. Advances in the growth of exceptionally high quality semiconductor nanowires and exact nanowire heterostructures allow Cytodiagnostics to add these materials into our nanomaterials portfolio.
Cytodiagnostics Advantage
Precise nanowires composed of III-V materials (including GaAs, InAs) and II-VI materials (including ZnSe, ZnS, ZnTe, ZnO) are manufactured using Molecular Beam Epitaxy (MBE), Chemical Vapor Deposition (CVD) or Metalorganic Chemical Vapor Deposition (MOCVD) as appropriate. Using the MBE system, we can also fabricate ternary nanowires of AlGaAs, or InGaAs, for example.
Using an in-house clean room equipped with electron beam lithography patterning capability, we are able to pattern catalyst in order to prepare controlled diameter nanowire arrays. Our in-situ catalyst deposition capability allows us to prepare defined diameter distribution arrays on a variety of substrates including III-V and also Si. For aligned arrays of nanowires of InAs, for example, we would use GaAs or InAs substrates. We also have in-situ doping capabilities to prepare the III-V nanowires in either n-type (Si doped) or p-type (Be doped) form. To ensure the highest quality materials, we validate and certify the nanowires using state of the art optical (e.g., micro-photoluminescence), electrical (IV, CV, in a dilution fridge), and structural (TEM, SEM, etc) characterization.
Cytodiagnostics is pleased to offers a wide variety of nanowires in arrays on a substrate, or in an alcohol solution for your choice of post processing. If required, we can also align the wires using a proprietary protocol and add contacts: ready to be integrated into existing electronics frameworks.
Custom Services
We welcome the opportunity to work on any custom compositions (such as the embedding of quantum dot segments within nanowires), substrates or concentrations that your particular application may call for. Please contact us to discuss your custom nanowire project.
